Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AUT:E | Dynamic random access memory | DEX Nichicon 5N20W67660

5N20W67660

Current - Supply (Max): 13mA

45V) • Backward-compatible to VDD = VDDQ = 1

Convertible

Xilinx Field Programmable Gate Array Part #XCKU3P-3SFVB784E

Micron Technology DRAM SDRAM-DDR4, Part #: MT40A1G8SA-062E AUT:E | Dynamic random access memory | DEX Nichicon 5N20W67660Micron Technology DRAM SDRAM DDR4, Part #: MT40A1G8SA 062E AUT: E features: VDD = VDDQ = 1. 2V + 60mv VPP = 2. 5V, 125mV, + 250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 16 internal banks (x4, x8): 4 groups of 4 banks each 8n bit prefetch architecture Programmable data strobe preambles Data strobe preamble training Command Address latency (CAL) Multipurpose register