Micron Technology DRAM , Part #MT47H128M16RT-25E AIT:C TR | Dynamic random access memory | DEX Tesla Audi Control Module Part #4G1-035-027-G

Audi Control Module Part #4G1-035-027-G

Xiilnx FPGA Part #XCKU3P-L1SFVB784I

Part #: IPW65R075CFD7AXKSA1

and Pair Polarity • MDC/MDIO Management Interface for PHY Register Configuration • Interrupt Pin Option • Power-Down and Power-Saving Modes • Operating Voltages - Core (DVDDL

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Micron Technology DRAM , Part #MT47H128M16RT-25E AIT:C TR | Dynamic random access memory | DEX Tesla Audi Control Module Part #4G1-035-027-GMicron Technology DRAM SDRAM DDR2, Part #MT47H128M16RT 25E AIT: C TR Features Industrial and automotive temperature compliant VDD = 1. 8V 0. 1V, VDDQ = 1. 8V 0. 1V JEDEC standard 1. 8V I O (SSTL_18 compatible) Differential data strobe (DQS, DQS#) option 4n bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS