Micron Technology DRAM SDRAM-DDR4, Part #: MT44K32M18RB-107E:B TR | Dynamic random access memory | DEX microchip technology Differential output offset voltage depends

Differential output offset voltage depends on the values of the external termination resistors

Write leveling

and 6-lead SOT-23 packages

Xiilnx FPGA Part #XC6VLX75T-2FFG784C

SKU : GEC:5419295-2

Micron Technology DRAM SDRAM-DDR4, Part #: MT44K32M18RB-107E:B TR | Dynamic random access memory | DEX microchip technology Differential output offset voltage dependsMicron Technology DRAM RLDRAM3, Part #: MT44K32M18RB 107E: B TR features: 1066 MHz DDR operation (2133 Mb s ball data rate) 76. 8 Gb s peak bandwidth (x36 at 1066 MHz clock frequency) Organization 32 Meg x 18, and 16 Meg x 36 common I O (CIO) 16 banks 1. 2V center terminated push pull I O 2. 5V VEXT, 1. 35V VDD, 1. 2V VDDQ I O Reduced cycle time (t RC (MIN) = 7. 5 12ns) SDR addressing Programmable READ WRITE latency (RL WL) and burst length Data mask