Micron Technology DRAM SDRAMMobile-, Part #: MT40A2G4SA-075:E | Dynamic random access memory | DEX MOSFET NLI:2124035-3

NLI:2124035-3

MIL:MT40A2G16SKL-062E B

Refresh time of 8192-cycle at TC temperature range:

Advantages:  Space savings High power density

576 x 8 internally

Micron Technology DRAM SDRAMMobile-, Part #: MT40A2G4SA-075:E | Dynamic random access memory | DEX MOSFET NLI:2124035-3Micron Technology DRAM SDRAM DDR4, Part #: MT40A2G4SA 075: E features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V, 125mV, +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 64ms at 40C to 85C 32ms at >85C to 95C 16ms at >95C to 105C 16 internal banks (x4, x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture Programmable