Micron Technology DRAM SDRAM-DDR3, Part #: MT41K128M16JT-125 AAT:K | Dynamic random access memory | DEX GE WETB Features: • Direct Sensor Input

Features: • Direct Sensor Input • High Output Torque • Low Pointer Flutter • High Input Impedance • Overvoltage Protection • Return to Zero • Internally Fused Leads in PDIP−16 and SO−20W Packages • These Devices are Pb−Free

Analog Devices Operational Amplifier Part #AD745KRZ-16

MRC:P58-00061

Part #AD8436JCPZ-RL | Converter | DEX features: Delivers true rms or average rectified value of ac waveform Fast settling at all input levels Accuracy: ±10 μV ± 0

high speed synchronous monolithic step-down switching regulator that accepts a wide input voltage range up to 65V

Micron Technology DRAM SDRAM-DDR3, Part #: MT41K128M16JT-125 AAT:K | Dynamic random access memory | DEX GE WETB Features: • Direct Sensor InputMicron Technology DRAM SDRAM DDR3L, Part #: MT41K128M16JT 125 AAT: K features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS (READ) latency (CL) Programmable posted CAS additive latency (AL)