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STEA500400
It is zinc plated to add more corrosion resistance to the surface of the bracket
Model XW6600
low-dropout voltage reference family available in tiny SC70-3 and SOT-23-3 packages
TMR1: 8-bit timer/counter
Micron Technology DRAM SDRAMMobile-, Part #: MT47H128M16RT-25E:C | Dynamic random access memory | DEX RePower IGBT Power Stack STEA500400Micron Technology DRAM SDRAM DDR2, Part #: MT47H128M16RT 25E: C features: VDD = 1. 8V 0. 1V, VDDQ = 1. 8V 0. 1V JEDEC standard 1. 8V I O (SSTL_18 compatible) Differential data strobe (DQS, DQS#) option 4n bit prefetch architecture Duplicate output strobe (RDQS) option for x8 DLL to align DQ and DQS transitions with CK 8 internal banks for concurrent operation Programmable CAS latency (CL) Posted CAS additive latency (AL) WRITE latency = READ latency 1
US$ 45.95
US$ 37.95
US$ 19.00