Micron Technology DRAM SDRAM-DDR, Part #: MT40A512M16LY-062E AAT:E TR | Dynamic random access memory | DEX IGBT Cover Insulation Part #: MT53E256M32D2DS-053 AUT:B features:

Part #: MT53E256M32D2DS-053 AUT:B features: • Ultra-low-voltage core and I/O power supplies – VDD1 = 1

high-current integrated circuits comprised of four or eight CMOS data latches

GNC:A70P25-1

VS-131MT180C

Focal length: 8 mm infinite

Micron Technology DRAM SDRAM-DDR, Part #: MT40A512M16LY-062E AAT:E TR | Dynamic random access memory | DEX IGBT Cover Insulation Part #: MT53E256M32D2DS-053 AUT:B features:Micron Technology DRAM SDRAM DDR4, Part #: MT40A512M16LY 062E AAT: E TR features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 64ms at 40C to 85C 32ms at 85C to 95C 16ms at 95C to 105C 8ms at 105C to 125C 16 internal banks (x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch