Micron Technology DRAM SDRAM-DDR4, Part #: MT41K512M8DA-107:P | Dynamic random access memory | DEX 13 inch Low power consumption

Low power consumption

photodiode amplifiers

VS-U5FH60FA60

Brand: GE

MT44K16M36RB-107E:B

Micron Technology DRAM SDRAM-DDR4, Part #: MT41K512M8DA-107:P | Dynamic random access memory | DEX 13 inch Low power consumptionMicron Technology DRAM SDRAM DDR3L, Part #: MT41K512M8DA 107: P features: VDD = VDDQ = 1. 35V (1. 2831. 45V) Backward compatible to VDD = VDDQ = 1. 5V 0. 075V Supports DDR3L devices to be backward compatible in 1. 5V applications Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS (READ)