Micron Technology DRAM , Part #: MT49H16M18SJ-25:B TR | Dynamic random access memory | DEX Renewable MAX9915EXT+T SC70

MAX9915EXT+T SC70

as opposed to the traditional reactive resolution

Xiilnx FPGA Part #XC7K325T-1FF900C

Free-Wheeling

Xiilnx FPGA Part #XC4VSX25-11FFG668C

Micron Technology DRAM , Part #: MT49H16M18SJ-25:B TR | Dynamic random access memory | DEX Renewable MAX9915EXT+T SC70Micron Technology DRAM RLDRAM2, Part #: MT49H16M18SJ 25: B TR features: 533 MHz DDR operation (1. 067 Gb s pin data rate) 38. 4 Gb s peak bandwidth (x36 at 533 MHz clock frequency) Organization 32 Meg x 9, 16 Meg x 18, and 8 Meg x 36 8 internal banks for concurrent operation and maximum bandwidth Reduced cycle time (15ns at 533 MHz) Nonmultiplexed addresses (address multiplexing option available) SRAM type interface Programmable READ latency (RL), row